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| Transistors 2SD0874, 2SD0874A (2SD874, 2SD874A) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0766 (2SB766) and 2SB0766A (2SB766A) Features * Large collector power dissipation PC * Low collector-emitter saturation voltage VCE(sat) * Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing 1 4.50.1 1.60.2 1.50.1 Unit: mm 4.0+0.25 -0.20 2.50.1 3 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) 2SD0874 2SD0874A VCEO VEBO IC ICP * 1.0+0.1 -0.2 0.40.08 1.50.1 3 2 0.50.08 0.40.04 Symbol VCBO Rating 30 60 25 50 5 1 1.5 1 150 -55 to +150 Unit V 3 0.4 max. 2.60.1 45 Collector-emitter voltage 2SD0874 (Base open) 2SD0874A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature V 3.00.15 V A A W C C 1: Base 2: Collector 3: Emitter MiniP3-F1 Package PC Tj Tstg Marking Symbol: * 2SD0874: Z * 2SD0874A: Y Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) 2SD0874 2SD0874A 2SD0874 2SD0874A VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage *1 Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) *1 Symbol VCBO VCEO Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCB = 20 V, IE = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Min 30 60 25 50 5 Typ Max Unit V V Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 V 0.1 A V V MHz 20 pF 85 50 0.2 0.85 200 340 VCE(sat) VBE(sat) fT Cob 0.4 1.2 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 Note) The part numbers in the parenthesis show conventional part number. Publication date: November 2002 SJC00197CED 1 2SD0874, 2SD0874A PC Ta 1.4 1.50 IC VCE Ta = 25C IB = 10 mA 9 mA 1.00 8 mA 7 mA 6 mA 5 mA 4 mA 0.50 3 mA 2 mA 0.25 1 mA VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) 10 IC / IB = 10 Collector power dissipation PC (W) 1.2 1.0 0.8 0.6 0.4 0.2 0 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness 1.25 Collector current IC (A) 1 Ta = 75C 25C 0.1 -25C 0.75 0.01 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 0.001 0.01 0.1 1 10 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (A) VBE(sat) IC 100 hFE IC 600 VCE = 10 V fT I E 200 V = 10 V CB Ta = 25C Base-emitter saturation voltage VBE(sat) (V) IC / IB = 10 Forward current transfer ratio hFE Transition frequency fT (MHz) 500 160 10 400 25C 1 Ta = -25C 75C 120 300 Ta = 75C 200 25C -25C 80 0.1 100 40 0.01 0.01 0.1 1 10 0 0.01 0.1 1 10 0 -1 -10 -100 Collector current IC (A) Collector current IC (A) Emitter current IE (mA) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 50 IE = 0 f = 1 MHz Ta = 25C 10 Safe operation area Single pulse TC = 25C 40 Collector current IC (A) ICP 1 IC t=1s DC 0.1 30 20 0 1 10 100 0.01 0.1 1 10 2SD0874 10 Collector-base voltage VCB (V) Collector-emitter voltage VCE (V) 2 SJC00197CED 2SD0874A 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL |
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